Imec's researchers' N-type PERT (passivated emitter, back-diffusion) solar cells have recently achieved a new record-setting conversion efficiency. This battery enables Meco's nickel/copper/silver plating (three main grid lines) technology And SoLayTec's Atomic Layer Deposition (ALD) Al2O3 process.
IMEC said that large-area silicon (156mm x 156mm) N-type PERT solar cells were calibrated at the Fraunhofer ISE CalLab.
Imec Photovoltaic Division Director Jozef Szlufcik said: “Although in the early stages of development, the results show that the n-type PERT solar cells have very high potential for efficiency. In addition, due to boron oxygen compounds, n-type cells are still not subject to the photodegradation of p-type cells. The impact, which leads to an increase in long-term energy production, and therefore lower the overall cost per kilowatt-hour."
The battery is said to have realized an open circuit voltage (Voc) of 677mV, a short circuit current (Jsc) of 39.1 mA/cm2 and a fill factor of 81.3%, demonstrating the potential for improvement with double-side contact crystalline silicon solar cells for mass commercial production. Conversion efficiency.
The N-type PERT cell is said to employ a back-covered p+ emitter created by boron diffusion, and the n+ front surface localized metal contacts are formed by Meco's nickel/copper/silver plating.
It is said that the p+ emitter backside local contacts have been created by a backside passivation stack and subsequent physical vapor deposition laser ablation of aluminum. The backside passivation stack includes a thin (<10 nm) ALD-based Al2O3 layer and SoLayTec's spatial ALD technique in its "InPassion" device.
Roger G?rtzen, SoLayTec's co-founder, marketing and sales manager, said in an interview with PV-Tech: "It is a good conclusion that our industrial InPassion ALD is better than thermal oxidation. This means that ALD equipment can be used. For the next-generation battery concepts, such as PERC technology and for N-passivation, there is no change in hardware."
The availability of low-cost N-type silicon is also seen as a mainstream solar cell manufacturer for the next few years, and it is expected that an important part of the substrate will be used more widely.
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